FCH47N60F
FCH47N60F Datasheet
FCH47N60F 600V N-Channel MOSFET
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FCH47N60F |
FCH47N60F (pdf) |
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| FCH47N60F 600V N-Channel MOSFET FCH47N60F 600V N-Channel MOSFET • 650V = 150°C • Typ. RDS on = • Fast Recovery Type trr = 240ns • Ultra Low Gate Charge typ. Qg = 210nC • Low Effective Output Capacitance typ. Cosseff. = 420pF • 100% avalanche tested May 2006 SuperFETTM SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-247 Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient 2006 Fairchild Semiconductor Corporation FCH47N60F 600 47 141 ± 30 1800 47 50 417 -55 to +150 300 Unit V mJ A mJ V/ns W/°C °C Typ. Max. Package Marking and Ordering Information Device Marking FCH47N60F Device FCH47N60F Package TO-247 Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA, TJ = 25°C VGS = 0V, ID = 250uA, TJ = 150°C Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 23.5A Note 4 -- |
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