FCA16N60_F109
FCA16N60_F109 Datasheet
FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET
| Part | Datasheet |
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FCA16N60_F109 |
FCA16N60_F109 (pdf) |
| Related Parts | Information |
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FCA16N60 |
FCA16N60 |
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| FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET December 2008 SuperFET TM • 650V = 150°C • Typ. • Ultra low gate charge typ. Qg=55nC • Low effective output capacitance typ. Coss.eff=110pF • 100% avalanche tested • RoHS Compliant SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-3P FCA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2008 Fairchild Semiconductor Corporation FCA16N60 600 16 48 ± 30 450 16 167 -55 to +150 300 Unit V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking FCA16N60 Device FCA16N60 FCA16N60_F109 Package TO-3P TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 8A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 8A Note 4 -- |
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