BSS110

BSS110 Datasheet

BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
BSS110	BSS110 (pdf)

PDF Datasheet Preview
May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. BSS84 -0.13A, -50V. RDS ON = VGS = -5V. BSS110 -0.17A, -50V. RDS ON = VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS ON High saturation current. TO-236AB BSS84 BSS110 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS84 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage RGS < 20 VGSS Gate-Source Voltage - Continuous Drain Current - Continuous TA = 30/35oC - Pulsed TA = 25oC Maximum Power Dissipation TA = 25°C TJ,TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient -50 -50 ±20 -55 to 150 300 BSS110 Units V A W °C °C °C/W 2000 Fairchild Semiconductor Corporation ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSSR ON CHARACTERISTICS Note 1 VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V VGS = -20 V, VDS= 0 V

PDF Datasheet Preview

May 2000

BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch.

BSS84 -0.13A, -50V. RDS ON = VGS = -5V. BSS110 -0.17A, -50V. RDS ON = VGS = -10V Voltage controlled p-channel small signal switch.

High density cell design for low RDS ON High saturation current.

TO-236AB BSS84

BSS110

Absolute Maximum Ratings Symbol Parameter

TA = 25°C unless otherwise noted BSS84

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage RGS < 20

VGSS

Gate-Source Voltage - Continuous

Drain Current - Continuous TA = 30/35oC
- Pulsed TA = 25oC

Maximum Power Dissipation TA = 25°C

TJ,TSTG Operating and Storage Temperature Range

Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient
-50 -50 ±20
-55 to 150 300

BSS110

Units V A

W °C °C
°C/W
2000 Fairchild Semiconductor Corporation

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

Type Min Typ Max Units

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

IGSSR

ON CHARACTERISTICS Note 1

VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V

VDS = -25 V, VGS = 0 V VGS = -20 V, VDS= 0 V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSS110 Datasheet file may be downloaded here without warranties.

Datasheet ID: BSS110 513536