BSR18B
BSR18B Datasheet
BSR18B
| Part | Datasheet |
|---|---|
BSR18B |
BSR18B (pdf) |
| PDF Datasheet Preview |
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| PNP General Purpose Amplifier BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 2 SOT-23 1 Base Emitter Collector Marking Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC TJ, TSTG Junction Temperature, Storage Temperature -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Ta = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25℃ Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB X 230 550 June 2007 Units V mA °C Units mW/℃ ℃/W 2007 Fairchild Semiconductor Corporation BSR18B PNP General Purpose Amplifier Electrical Characteristics * Ta = 25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO V BR CBO V BR EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current |
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