BSR13

BSR13 Datasheet

BSR13

Part	Datasheet
BSR13	BSR13 (pdf)

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BSR13 BSR13 NPN General Purpose Amplifier • Sourced from process E B SOT-23 Mark U7 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 30 60 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO V BR CBO V BR EBO ICBO Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cutoff Current On Characteristics IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 150°C VEB = 3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V Curent Gain Bandwidth Product * Pulse Test Pulse Width 300µs, Duty Cycle IC = 20mA, VCE = 20V, f = 100MHz

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BSR13

BSR13

NPN General Purpose Amplifier
• Sourced from process

E B SOT-23

Mark U7

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings 30 60
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V A °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO V BR CBO V BR EBO ICBO

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

IEBO

Emitter Cutoff Current

On Characteristics

IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 150°C VEB = 3.0V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics

IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V *

IC = 150mA, IB = 15V IC = 500mA, IB = 50V

IC = 150mA, IB = 15V IC = 500mA, IB = 50V

Curent Gain Bandwidth Product
* Pulse Test Pulse Width 300µs, Duty Cycle

IC = 20mA, VCE = 20V, f = 100MHz

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Datasheet ID: BSR13 513532