BPW36

BPW36 Datasheet

BPW36/BPW37

Part	Datasheet
BPW36	BPW36 (pdf)

Related Parts	Information
BPW37	BPW37

PDF Datasheet Preview
BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS Base Emitter 45° Collector Case Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. • Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered • The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages. SCHEMATIC Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 5 300 600 Unit °C °C °C °C V mW 2001 Fairchild Semiconductor Corporation DS300279 3/13/01 1 OF 4 BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER TEST CONDITIONS UNITS Collector-Emitter Breakdown IC = 10 mA, Ee = 0 BVCEO Emitter-Base Breakdown IE = 100 µA, Ee = 0 BVEBO Collector-Base Breakdown IC = 100 µA, Ee = 0 BVCBO Collector-Emitter Leakage VCE = 10 V, Ee = 0 ICEO Reception Angle at 1/2 Sensitivity

PDF Datasheet Preview

BPW36/BPW37

HERMETIC SILICON PHOTOTRANSISTOR

PACKAGE DIMENSIONS

Base Emitter
45°

Collector Case

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
• The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages.

SCHEMATIC

Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning
agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
45 5 300 600

Unit °C °C °C °C V mW
2001 Fairchild Semiconductor Corporation DS300279 3/13/01
1 OF 4

BPW36/BPW37

HERMETIC SILICON PHOTOTRANSISTOR

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER

TEST CONDITIONS

UNITS

Collector-Emitter Breakdown

IC = 10 mA, Ee = 0

BVCEO

Emitter-Base Breakdown

IE = 100 µA, Ee = 0

BVEBO

Collector-Base Breakdown

IC = 100 µA, Ee = 0

BVCBO

Collector-Emitter Leakage

VCE = 10 V, Ee = 0

ICEO

Reception Angle at 1/2 Sensitivity

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Datasheet ID: BPW36 513529