BF494_D27Z

BF494_D27Z Datasheet

BF494 NPN RF Transistor

Part	Datasheet
BF494_D27Z	BF494_D27Z (pdf)

Related Parts	Information
BF494_D74Z	BF494_D74Z
BF494	BF494

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BF494 NPN RF Transistor BF494 NPN RF Transistor July 2006 TO-92 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Collector Emitter Base Value Unit VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous Junction Temperature TSTG Storage Temperature Range - 55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Parameter Total Device Dissipation, by Derate above 25°C Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Value 350 125 357 Unit mW/°C °C/W °C/W Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Conditions V BR CEO V BR CBO V BR EBO ICES hFE VCE sat VBE sat VBE ON Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1.0mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 40V, VEB = 0V VCE = 10V, IC = 1mA IC = 10mA, IB = 5mA IC = 10mA, IB = 5mA VCE = 10V, IC = 10mA * DC Item are tested by Pulse Test Pulse Duty Min. 20 30 Max. 10 222 740

PDF Datasheet Preview

BF494 NPN RF Transistor

BF494

NPN RF Transistor

July 2006

TO-92

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Parameter

Collector Emitter Base

Value

Unit

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current - Continuous

Junction Temperature

TSTG

Storage Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Parameter

Total Device Dissipation, by Derate above 25°C Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient

Value
350 125 357

Unit
mW/°C °C/W °C/W

Electrical Characteristics* TC = 25°C unless otherwise noted

Parameter

Conditions

V BR CEO V BR CBO V BR EBO ICES hFE VCE sat VBE sat VBE ON

Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage

IC = 1.0mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 40V, VEB = 0V VCE = 10V, IC = 1mA IC = 10mA, IB = 5mA IC = 10mA, IB = 5mA VCE = 10V, IC = 10mA
* DC Item are tested by Pulse Test Pulse Duty

Min.
20 30

Max.
10 222 740

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Datasheet ID: BF494_D27Z 513528