BD375/377/379
Part | Datasheet |
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BD37510STU (pdf) |
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PDF Datasheet Preview |
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BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage BD375 BD377 BD379 VCEO Collector-Emitter Voltage BD375 BD377 BD379 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature TO-126 Emitter 2.Collector 3.Base Value 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units VCEO sus * Collector-Emitter Sustaining Voltage BD375 IC = 100mA, IB = 0 BD377 BD379 BVCBO Collector-Base BD375 IC = 100µA, IE = 0 Breakdown Voltage BD377 BD379 ICBO IEBO hFE1 hFE2 VCE sat VBE on tON tOFF Collector Cut-off Current Emitter Cut-off Current * DC Current Gain BD375 BD377 BD379 * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Turn ON Time Turn OFF Time |
More datasheets: BD3776STU | BD37725STU | BD37716STU | BD37710STU | BD3756STU | BD37525STU | BD37916STU | BD37516STU | BD3796STU | BD37910STU |
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