BCW60A/B/C/D
Part | Datasheet |
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BCW60D (pdf) |
Related Parts | Information |
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BCW60B |
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BCW60A |
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BCW60A_D87Z |
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BCW60C |
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BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 2 1 SOT-23 Base Emitter Collector Value 32 5 100 350 150 Units V mA mW °C 2002 Fairchild Semiconductor Corporation BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICES IEBO hFE Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D IC=2mA, IB=0 IE=1µA, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2mA VCE=1V, IC=50mA VCE sat VBE sat VBE on Cob fT NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA VCE=5V, IC=2mA VCB=10V, IE=0, f=1MHz IC=10mA, VCE=5V, f=100MHz |
More datasheets: 3294-15USOC/S400-A6 | 206325036001001 | 206325164002011 | 206325164002001 | 206325098002001 | 206325098001001 | 206325064002001 | 206325064001001 | 494-10UYT/S530-A3 | BCW60B |
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