BCW32
BCW32 Datasheet
BCW32
| Part | Datasheet |
|---|---|
BCW32 |
BCW32 (pdf) |
| PDF Datasheet Preview |
|---|
| BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process SOT-23 Mark D2 Base Emitter Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector current DC TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 32 500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CBO V BR CEO V BR EBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics IC = 2.0mA, IB = 0 IC = 10µA, IB = 0 IC = 10µA, IC = 0 VCB = 32V, IE = 0 VCB = 32V, IE = 0, TA = 100°C DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V Current Gain Bandwidth Product IC = 2.0mA, VCE = 5.0V |
| More datasheets: M3479 SL002 | M3479 SL005 | A1635-2R5475-R | A1635-2R5475 | A1030-2R5155 | A1020-2R5105 | A0820-2R5474 | A0820-2R5474-R | A1020-2R5105-R | A1030-2R5155-R |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BCW32 Datasheet file may be downloaded here without warranties.