BC635_J35Z

BC635_J35Z Datasheet


BC635/637/639

Part Datasheet
BC635_J35Z BC635_J35Z BC635_J35Z (pdf)
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BC639_J35Z BC639_J35Z BC639_J35Z
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PDF Datasheet Preview
BC635/637/639

BC635/637/639

Switching and Amplifier Applications
• Complement to BC636/638/640

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCER

Collector-Emitter Voltage at BC635

BC637

BC639

VCES

Collector-Emitter Voltage BC635 BC637 BC639

VCEO

Collector-Emitter Voltage BC635 BC637 BC639

VEBO

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

TSTG

Storage Temperature
• PW=5ms, Duty Cycle=10%

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCEO

Collector-Emitter Breakdown Voltage BC635 BC637 BC639

IC=10mA, IB=0

ICBO IEBO hFE1 hFE2
hFE3 VCE sat VBE on fT

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

All BC635 BC637/BC639 All

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA
More datasheets: H0PPS-2436G | H4PXS-2406G | H2PXS-2406G | H4PXS-2406M | H2PXS-2406M | 383-2UYC/S530-A4 | AFBR-57F5MZ | BC639_J35Z | BC63916_J35Z | BC637_J35Z


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Datasheet ID: BC635_J35Z 513502