BC318C

BC318C Datasheet

BC318C PNP Epitaxial Silicon Transistor

Part	Datasheet
BC318C	BC318C (pdf)

PDF Datasheet Preview
BC318C PNP Epitaxial Silicon Transistor BC318C PNP Epitaxial Silicon Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process September 2007 TO-92 Emitter Base Collector Absolute Maximum Ratings TC=25°C unless otherwise noted VCBO VCEO VEBO IC TJ, TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Value 30 20 5 100 -55 ~ 150 Units V mA °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB X Max. 625 200 Units mW/°C °C/W °C/W Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO BVCES ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current IC = 10uA IC = 1mA IE = 100uA IC = 100uA VCB = 20V T = 25 °C T = 100 °C hFE VCE sat VBE on Ccb DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance VCE = 5V, IC = 10 uA VCE = 5V, IC = 2 mA IC = 10 mA, IB = mA IC = 100 mA, IB = 5 mA VCE = 5V, IC = 2m VCE = 5V, IC = 10mA

PDF Datasheet Preview

BC318C PNP Epitaxial Silicon Transistor

BC318C PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process

September 2007

TO-92

Emitter Base Collector

Absolute Maximum Ratings TC=25°C unless otherwise noted

VCBO VCEO VEBO IC TJ, TSTG

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Value
30 20 5 100 -55 ~ 150

Units

V mA °C

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

Max.
625 200

Units
mW/°C °C/W °C/W

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO BVCES

ICBO

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage

Collector Cut-off Current

IC = 10uA IC = 1mA IE = 100uA IC = 100uA VCB = 20V

T = 25 °C T = 100 °C
hFE VCE sat VBE on Ccb

DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance

VCE = 5V, IC = 10 uA VCE = 5V, IC = 2 mA

IC = 10 mA, IB = mA IC = 100 mA, IB = 5 mA

VCE = 5V, IC = 2m VCE = 5V, IC = 10mA

More datasheets: AMG-100 | AMG-150 | AMG-125 | AMG-250 | AMG-300 | AMG-175 | AMG-225 | AMG-200 | 20039 | GPF13.3W

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BC318C Datasheet file may be downloaded here without warranties.

Datasheet ID: BC318C 513498