BC307/308/309
Part | Datasheet |
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BC308C_J35Z (pdf) |
Related Parts | Information |
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BC308_J35Z |
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BC307B_J35Z |
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BC308A_J35Z |
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BC307_J35Z |
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BC307BTFR |
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BC308A |
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BC308TA |
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BC307BU |
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BC308CBU |
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BC308BU |
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BC308BTA |
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BC308ABU |
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BC307CBU |
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BC308C |
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BC308 |
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BC307B |
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BC307 |
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BC308ATA |
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BC307ATA |
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BC307ABU |
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BC308TAR |
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BC308BBU |
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BC308ATF |
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BC308ATFR |
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BC307BBU |
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BC309CBU |
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BC307BTA |
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BC309BTA |
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BC309BBU |
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BC309ATA |
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BC307BTF |
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BC309ABU |
PDF Datasheet Preview |
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BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise BC309 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCES Collector-Emitter Voltage BC307 BC308/309 VCEO Collector-Emitter Voltage BC307 BC308/309 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current DC Collector Power Dissipation Junction Temperature Storage Temperature TO-92 Collector Base Emitter Value -50 -30 -45 -25 -5 -100 500 150 -55 ~ 150 Units V mA mW °C °C 2002 Fairchild Semiconductor Corporation BC307/308/309 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage BC307 BC308/309 IC= -2mA, IB=0 BVCES Collector-Emitter Breakdown Voltage BC307 BC308/309 IC= -10µA, VBE=0 BVEBO ICES hFE VCE sat Emitter-Base Breakdown Voltage Collector Cut-off Current BC307 BC308/309 DC Current Gain Collector-Emitter Saturation Voltage VBE sat Collector-Base Saturation Voltage VBE on fT Cob Cib NF Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance |
More datasheets: BC183C_J35Z | BC183C | FAN5233MTCX | FAN5233MTC | CSL05D TR | CSL05D BK | CSL05 BK | CSL05 TR | 10105 | BC308_J35Z |
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