BC212L
BC212L Datasheet
BC212L
| Part | Datasheet |
|---|---|
BC212L |
BC212L (pdf) |
| Related Parts | Information |
|---|---|
|
BC212L_J35Z |
BC212L_J35Z |
|
BC212L_D27Z |
BC212L_D27Z |
|
BC212L_D75Z |
BC212L_D75Z |
| PDF Datasheet Preview |
|---|
| BC212L BC212L TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 300 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2000 Fairchild Semiconductor International Max 625 Units mW/°C °C/W °C/W BC212L PNP General Purpose Amplifier continued Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage |
| More datasheets: 420114B14 | 410053A14 | 420122A14 | 420091B18 | 420113A14 | 420113B14 | 420013B14 | 420111B14 | 420072B14 | BC212L_J35Z |
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