BC212B_J35Z

BC212B_J35Z Datasheet

BC212B

Part	Datasheet
BC212B_J35Z	BC212B_J35Z (pdf)

Related Parts	Information
BC212B_D27Z	BC212B_D27Z
BC212B_D26Z	BC212B_D26Z
BC212B	BC212B

PDF Datasheet Preview
BC212B BC212B PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process TO-92 Collector Base Emitter Absolute Maximum Ratings* TC=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 50 60 5 100 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150°C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics BVCEO Collector-Emitter Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics* IC = 2mA IC = 10µA IE = 10µA VCB = 30V VEB = 4V DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA

PDF Datasheet Preview

BC212B

BC212B

PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at collector currents to 100mA.
• Sourced from process

TO-92

Collector Base Emitter

Absolute Maximum Ratings* TC=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 50 60 5 100
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150°C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BVCEO Collector-Emitter Breakdown Voltage

BVCBO Collector-Base Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics*

IC = 2mA IC = 10µA IE = 10µA VCB = 30V VEB = 4V

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics

VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA

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Datasheet ID: BC212B_J35Z 513146