2SC3503/KSC3503 NPN Epitaxial Silicon Transistor
Part | Datasheet |
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2SC3503CSTU (pdf) |
Related Parts | Information |
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2SC3503DSTU |
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2SC3503ESTU |
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2SC3503FSTU |
PDF Datasheet Preview |
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2SC3503/KSC3503 NPN Epitaxial Silicon Transistor 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Parameter BVCBO Collector-Base Voltage BVCEO Collector-Emitter Voltage BVEBO Emitter-Base Voltage Collector Current DC Collector Current Pulse Total Device Dissipation, TC=25°C TC=125°C TJ, TSTG Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case * Device mounted on minimum pad size March 2008 TO-126 Emitter 2.Collector 3.Base Ratings 5 100 200 7 - 55 ~ +150 Units V mA W °C Max. Units °C/W hFE Classification Classification C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Ordering Information Part Number* Marking Package Packing Method Remarks 2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade |
More datasheets: HLMP-CW77-PQ000 | HLMP-CW47-STBDD | HLMP-CW77-RS0DD | HLMP-CW76-RS0DD | HLMP-CW47-ST0DD | HLMP-CW46-QR0DD | HLMP-CW77-PQBDD | HLMP-CW46-STBDD | HLMP-CW47-QR0DD | 23360-10 |
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