2N5961

2N5961 Datasheet

2N5961

Part	Datasheet
2N5961	2N5961 (pdf)

Related Parts	Information
2N5961_D27Z	2N5961_D27Z

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2N5961 2N5961 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Val60ue VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 100 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5961 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N5961 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS

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2N5961
2N5961

Discrete POWER & Signal Technologies

TO-92

NPN General Purpose Amplifier

This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process See 2N5088 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Val60ue

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
100 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N5961 625 200

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N5961

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

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Datasheet ID: 2N5961 513011