2N5953

2N5953 Datasheet


2N5953 N-Channel RF Amplifier

Part Datasheet
2N5953 2N5953 2N5953 (pdf)
Related Parts Information
2N5953_J35Z 2N5953_J35Z 2N5953_J35Z
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2N5953 N-Channel RF Amplifier

September 2007
2N5953 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92

Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

VDG VGS IGF TJ, TSTG

Parameter

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
30 -30 10 -55 ~ 150

Max.
350 125 357

Units

V mA °C

Units
mW/°C °C/W °C/W
2007 Fairchild Semiconductor Corporation
2N5953 N-Channel RF Amplifier

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

Min. Max. Units

Off Characteristics

V BR GSS IGSS

VGS off VGS

Gate-Source Cut-off Voltage Gate-Source Forward Voltage

IG = 1.0uA, VDS = 0 VGS = 15V, VDS = 0, T = 25°C

T = 100°C

VDS = 15V, ID = 100nA VDS = 15V, ID = 250uA
-200

On Characteristics

IDSS VDS on
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Datasheet ID: 2N5953 513010