2N5772_D75Z

2N5772_D75Z Datasheet

2N5772

Part	Datasheet
2N5772_D75Z	2N5772_D75Z (pdf)

Related Parts	Information
2N5772_D26Z	2N5772_D26Z
2N5772	2N5772

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2N5772 NPN Switching Transistor • Sourced from process 2N5772 TO-92 Emitter Base Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continued TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Value 15 40 300 - 55 ~ 150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO BV BR CES BV BR CBO BV BR EBO ICBO ICES Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current IEBO Emitter Cutoff Current On Characteristics * IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 20V, IE = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C VEB = 5.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA

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2N5772

NPN Switching Transistor
• Sourced from process
2N5772

TO-92

Emitter Base Collector

Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continued

TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

Value 15 40 300
- 55 ~ 150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO BV BR CES BV BR CBO BV BR EBO ICBO ICES

Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current

IEBO

Emitter Cutoff Current

On Characteristics *

IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 20V, IE = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C VEB = 5.0V, IC = 0

DC Current Gain

VCE sat

Collector-Emitter Saturation Voltage

VBE sat

Base-Emitter Saturation Voltage

Small Signal Characteristics

VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA

IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA

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Datasheet ID: 2N5772_D75Z 513004