2N5639_D26Z
2N5639_D26Z Datasheet
2N5639
| Part | Datasheet |
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2N5639_D26Z |
2N5639_D26Z (pdf) |
| Related Parts | Information |
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2N5639_D75Z |
2N5639_D75Z |
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| 2N5639 2N5639 N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process TO-92 Absolute Maximum Ratings * TC=25°C unless otherwise noted Drain Source Gate Parameter Value Units Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics V BR GSS Gate-Source Breakdown Voltage IGSS ID off Drain Cutoff Leakage Current On Characteristics VDS = 0, IG = -10µA VGS = -15V, VDS = 0 VDS = 12V, VGS = 15V IDSS Zero-Gate Voltage Drain Current * rDS on Drain-Source On Resistance Small Signal Characteristics VDS = 20V, IGS = 0 VGS = 0V, ID = 1.0mA rds on Drain-Source On Resistance Ciss Input Capacitance Crss |
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