2N5401_S00Z

2N5401_S00Z Datasheet

2N5401

Part	Datasheet
2N5401_S00Z	2N5401_S00Z (pdf)

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PDF Datasheet Preview
2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage VCEO= 150V • Collector Dissipation PC max =625mW • Suffix “-C” means Conter Collector Emitter Collector Base TO-92 Emitter Base Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -600 625 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -120V, IE=0 VEB= -3V, IC=0 IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V, f=100MHz Output Capacitance Noise Figure * Pulse Test Pulse Duty VCB= -10V, IE=0, f=1MHz IC= -250µA, VCE= -5V f=10Hz to 15.7KHz Min. -160 -150 30 60 50 Typ.

PDF Datasheet Preview

2N5401
2N5401

Amplifier Transistor
• Collector-Emitter Voltage VCEO= 150V
• Collector Dissipation PC max =625mW
• Suffix “-C” means Conter Collector Emitter Collector Base

TO-92

Emitter Base Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature

Value -160 -150
-5 -600 625 150 -55 ~ 150

Units V mA
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE

VCE sat

VBE sat

Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

IC= -100µA, IE=0

IC= -1mA, IB=0 IE= -10µA, IC=0

VCB= -120V, IE=0

VEB= -3V, IC=0

IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V

IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA

IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA

IC= -10mA, VCE= -10V, f=100MHz

Output Capacitance

Noise Figure
* Pulse Test Pulse Duty

VCB= -10V, IE=0, f=1MHz

IC= -250µA, VCE= -5V f=10Hz to 15.7KHz

Min. -160 -150
30 60 50

Typ.

More datasheets: M213572 SL002 | M213572 SL001 | T0058735936N | V62/11608-01XE | 2N5401TAR | 2N5401_D10Z | 2N5401_D28Z | 2N5401_D81Z | 2N5401_J05Z | 2N5401_J61Z

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Datasheet ID: 2N5401_S00Z 512998