2N5400
2N5400 Datasheet
2N5400
| Part | Datasheet |
|---|---|
2N5400 |
2N5400 (pdf) |
| Related Parts | Information |
|---|---|
|
2N5400_D75Z |
2N5400_D75Z |
|
2N5400RA |
2N5400RA |
|
2N5400_D27Z |
2N5400_D27Z |
|
2N5400_D81Z |
2N5400_D81Z |
|
2N5400_S00Z |
2N5400_S00Z |
|
2N5400_D26Z |
2N5400_D26Z |
| PDF Datasheet Preview |
|---|
| 2N5400 2N5400 TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 600 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5400 625 Units V mA °C Units mW /°C °C/W °C/W 2001 Fairchild Semiconductor Corporation 2N5400 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO |
| More datasheets: EB-9000PS | EB-9000S-1 | 83229001 | 116TX | 2N5400_D75Z | 2N5400RA | 2N5400_D27Z | 2N5400_D81Z | 2N5400_S00Z | 2N5400_D26Z |
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