1N4150_T26A
1N4150_T26A Datasheet
1N4150 / FDLL4150
| Part | Datasheet |
|---|---|
1N4150_T26A |
1N4150_T26A (pdf) |
| Related Parts | Information |
|---|---|
|
1N4150_T50A |
1N4150_T50A |
1N4150 |
1N4150 |
|
1N4150TR_S00Z |
1N4150TR_S00Z |
|
1N4150_T50R |
1N4150_T50R |
|
1N4150_S62Z |
1N4150_S62Z |
1N4150TR |
1N4150TR |
| PDF Datasheet Preview |
|---|
| 1N4150 / FDLL4150 Discrete POWER & Signal Technologies 1N4150 / FDLL4150 DO-35 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL4150 BLACK ORANGE High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value W IV IO IF surge Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = second Pulse width = microsecond Storage Temperature Range Operating Junction Temperature 50 200 400 600 -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 200 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units A °C °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1N / FDLL 4150 500 300 Units mW /°C °C/W 1997 Fairchild Semiconductor Corporation 1N4150 / FDLL4150 High Conductance Ultra Fast Diode |
| More datasheets: 10323-ER | FIT0409 | 13930 | FMG2G150US60 | 50739171435600F | AS35 3R030 | M213104 SL002 | M213104 SL005 | M213104 SL001 | 1N4150_T50A |
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