1N4150_T26A

1N4150_T26A Datasheet


1N4150 / FDLL4150

Part Datasheet
1N4150_T26A 1N4150_T26A 1N4150_T26A (pdf)
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PDF Datasheet Preview
1N4150 / FDLL4150

Discrete POWER & Signal Technologies
1N4150 / FDLL4150

DO-35

LL-34

THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL4150 BLACK

ORANGE

High Conductance Ultra Fast Diode

Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

W IV IO IF surge

Tstg TJ

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

Peak Forward Surge Current Pulse width = second Pulse width = microsecond

Storage Temperature Range

Operating Junction Temperature
50 200 400 600
-65 to +200 175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 200 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

A °C °C

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient
1N / FDLL 4150 500 300

Units
mW /°C °C/W
1997 Fairchild Semiconductor Corporation
1N4150 / FDLL4150

High Conductance Ultra Fast Diode
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Datasheet ID: 1N4150_T26A 512980