2N5246_D74Z

2N5246_D74Z Datasheet

2N5246

Part	Datasheet
2N5246_D74Z	2N5246_D74Z (pdf)

Related Parts	Information
2N5246	2N5246
2N5246_J35Z	2N5246_J35Z

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2N5246 2N5246 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process TO-92 1 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 30 -30 10 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics IG = 1.0µA, VDS = 0 VGS = 25V, VDS = 0 VDS = 15V, ID = 1.0nA IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 15V, VGS = 0 Forward Transferconductance goss Common- Source Output Conductance * Pulse Test Pulse 300µs VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz Thermal Characteristics TA=25°C unless otherwise noted Parameter Total Device Dissipation

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2N5246
2N5246

N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers.
• Sourced from process

TO-92 1

Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TJ, TSTG

Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings 30 -30 10
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdwon Voltage

IGSS

VGS off

Gate-Source Cutoff Voltage

On Characteristics

IG = 1.0µA, VDS = 0 VGS = 25V, VDS = 0 VDS = 15V, ID = 1.0nA

IDSS

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

VDS = 15V, VGS = 0

Forward Transferconductance
goss

Common- Source Output Conductance
* Pulse Test Pulse 300µs

VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz

Thermal Characteristics TA=25°C unless otherwise noted

Parameter

Total Device Dissipation

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Datasheet ID: 2N5246_D74Z 512681