2N4953_D26Z
2N4953_D26Z Datasheet
2N4953
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2N4953_D26Z |
2N4953_D26Z (pdf) |
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2N4953 |
2N4953 |
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| 2N4953 2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. • Sourced from Process TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 30 60 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C 2002 Fairchild Semiconductor Corporation 2N4953 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO Collector-Emitter Breakdown Voltage * BV BR CBO Collector-Base Breakdown Voltage BV BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO On Characteristics * IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VEB = 3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage |
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