2N4410_D27Z

2N4410_D27Z Datasheet

2N4410

Part	Datasheet
2N4410_D27Z	2N4410_D27Z (pdf)

Related Parts	Information
2N4410_D26Z	2N4410_D26Z
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2N4410_D75Z	2N4410_D75Z
2N4410	2N4410

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2N4410 2N4410 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4410 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N4410 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS

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2N4410
2N4410

Discrete POWER & Signal Technologies

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process See 2N5551 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
200 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N4410 625 200

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N4410

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

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Datasheet ID: 2N4410_D27Z 512676