2N4123TAR
2N4123TAR Datasheet
2N4123
| Part | Datasheet |
|---|---|
2N4123TAR |
2N4123TAR (pdf) |
| Related Parts | Information |
|---|---|
|
2N4123TA |
2N4123TA |
|
2N4123TF |
2N4123TF |
|
2N4123TFR |
2N4123TFR |
|
2N4123BU |
2N4123BU |
| PDF Datasheet Preview |
|---|
| 2N4123 [[2]]]]]N]]]]]4]]]]1]]]]2]]]]]3]]]]]] TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4123 625 200 Units V mA °C Units mW/°C °C/W °C/W 2001 Fairchild Semiconductor Corporation 2N4123 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO |
| More datasheets: IRM-3638 | PSF-155-C-CF | PSF-155-D-CF | PSF-155-A-CNF | PSF-155-C-CNF | PSF-155-B-CF | PSF-155-A-CF | PSF-155-B-CNF | PSF-155-D-CNF | FQAF10N80 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N4123TAR Datasheet file may be downloaded here without warranties.