2N4123TAR

2N4123TAR Datasheet


2N4123

Part Datasheet
2N4123TAR 2N4123TAR 2N4123TAR (pdf)
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TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
200 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N4123 625 200

Units

V mA °C

Units
mW/°C °C/W °C/W
2001 Fairchild Semiconductor Corporation
2N4123

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO
More datasheets: IRM-3638 | PSF-155-C-CF | PSF-155-D-CF | PSF-155-A-CNF | PSF-155-C-CNF | PSF-155-B-CF | PSF-155-A-CF | PSF-155-B-CNF | PSF-155-D-CNF | FQAF10N80


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Datasheet ID: 2N4123TAR 512673