2N3703

2N3703 Datasheet

2N3703

Part	Datasheet
2N3703	2N3703 (pdf)

PDF Datasheet Preview
2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process PNP Epitaxial Silicon Transistor TO-92 Emitter Collector Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -30 -50 -500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO Collector-Emitter Breakdown Voltage BV BR CBO Collector-Base Breakdown Voltage BV BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics * IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage

PDF Datasheet Preview

2N3703
2N3703

PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA.
• Sourced from Process

PNP Epitaxial Silicon Transistor

TO-92

Emitter Collector Base

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TST

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value -30 -50 -500
-55 ~ +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO Collector-Emitter Breakdown Voltage

BV BR CBO Collector-Base Breakdown Voltage

BV BR EBO Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics *

IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE sat Base-Emitter Saturation Voltage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N3703 Datasheet file may be downloaded here without warranties.

Datasheet ID: 2N3703 512665