2N3417_D74Z

2N3417_D74Z Datasheet

2N3416 / 2N3417

Part	Datasheet
2N3417_D74Z	2N3417_D74Z (pdf)

Related Parts	Information
2N3417_D26Z	2N3417_D26Z
2N3417_D89Z	2N3417_D89Z
2N3417_D75Z	2N3417_D75Z
2N3417_D27Z	2N3417_D27Z
2N3416_D74Z	2N3416_D74Z
2N3416_D29Z	2N3416_D29Z
2N3416_D27Z	2N3416_D27Z
2N3416	2N3416
2N3416_D26Z	2N3416_D26Z
2N3417	2N3417

PDF Datasheet Preview
2N3416 / 2N3417 2N3416 2N3417 TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 50 500 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3416 / 2N3417 625 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N3416 / 2N3417 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 Voltage V BR CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 V BR EBO

PDF Datasheet Preview

2N3416 / 2N3417
2N3416 2N3417

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
50 500 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N3416 / 2N3417 625

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N3416 / 2N3417

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO

Collector-Emitter Breakdown

IC = 10 mA, IB = 0

Voltage*

V BR CBO

Collector-Base Breakdown Voltage IC = 10 µA, IE = 0

V BR EBO

More datasheets: 120-156 | DRI0029 | 2N3417_D26Z | 2N3417_D89Z | 2N3417_D75Z | 2N3417_D27Z | 2N3416_D74Z | 2N3416_D29Z | 2N3416_D27Z | 2N3416

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N3417_D74Z Datasheet file may be downloaded here without warranties.

Datasheet ID: 2N3417_D74Z 512662