2N3417_D74Z

2N3417_D74Z Datasheet


2N3416 / 2N3417

Part Datasheet
2N3417_D74Z 2N3417_D74Z 2N3417_D74Z (pdf)
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PDF Datasheet Preview
2N3416 / 2N3417
2N3416 2N3417

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
50 500 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N3416 / 2N3417 625

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N3416 / 2N3417

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO

Collector-Emitter Breakdown

IC = 10 mA, IB = 0

Voltage*

V BR CBO

Collector-Base Breakdown Voltage IC = 10 µA, IE = 0

V BR EBO
More datasheets: 120-156 | DRI0029 | 2N3417_D26Z | 2N3417_D89Z | 2N3417_D75Z | 2N3417_D27Z | 2N3416_D74Z | 2N3416_D29Z | 2N3416_D27Z | 2N3416


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Datasheet ID: 2N3417_D74Z 512662