2N3415

2N3415 Datasheet


2N3415

Part Datasheet
2N3415 2N3415 2N3415 (pdf)
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2N3415
2N3415

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
500 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N3415 625 200

Units

V mA °C

Units
mW/°C °C/W °C/W
2001 Fairchild Semiconductor Corporation
2N3415

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO
More datasheets: AEDS-9641-110 | AEDS-9640-110 | AEDS-9640-210 | AEDS-9641-210 | AEDS-9641-P10 | AEDS-9640-P10 | EPS050250UPS-P5P-KH | 2N3415_D74Z | 2N3415_D27Z | 2N3415_D26Z


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Datasheet ID: 2N3415 512661