2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
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2N3392 (pdf) |
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2N3391A |
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2N3390_D75Z |
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2N3393_D26Z |
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2N3390 |
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2N3393 |
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2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 2N3390 2N3391 2N3391A 2N3392 2N3393 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3390 / 3391/A / 3392 / 3393 625 Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units |
More datasheets: NLP25-7607 | NLP25-7612 | NLP25-7629 | NLP25-7605 | AD9765-EBZ | AD9709-EBZ | AD9763-EBZ | AD9767-EBZ | PY-1 | 2N3391A |
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