1N6266

1N6266 Datasheet


1N6266

Part Datasheet
1N6266 1N6266 1N6266 (pdf)
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1N6266

GaAs INFRARED EMITTING DIODE

PACKAGE DIMENSIONS

ANODE CASE
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the

TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• * Indicates JEDEC registered values
• The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package.

SCHEMATIC

ANODE

Connected

To Case

CATHODE

Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning
agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter

Rating

Unit

Operating Temperature *Storage Temperature *Soldering Temperature Iron 3,4,5 and 6 *Soldering Temperature Flow 3,4 and 6 *Continuous Forward Current *Forward Current pw, 1µs 200Hz *Reverse Voltage *Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR
-65 to +125

TSTG
-65 to +150

TSOL-I
240 for 5 sec

TSOL-F
260 for 10 sec

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER *Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage *Reverse Leakage Current *Radiant Intensity Rise Time 0-90% of output Fall Time 100-10% of output

TEST CONDITIONS IF = 100 mA

IF = 100 mA VR = 3 V

IF = 100 mA
±10

UNITS nm

Deg. V
µA mW/sr
µs µs
2001 Fairchild Semiconductor Corporation DS300278 3/12/01
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Datasheet ID: 1N6266 512655