1N6266

1N6266 Datasheet

1N6266

Part	Datasheet
1N6266	1N6266 (pdf)

PDF Datasheet Preview
1N6266 GaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS ANODE CASE 13 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • * Indicates JEDEC registered values • The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package. SCHEMATIC ANODE Connected To Case CATHODE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Rating Unit Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Continuous Forward Current Forward Current pw, 1µs 200Hz Reverse Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR -65 to +125 TSTG -65 to +150 TSOL-I 240 for 5 sec TSOL-F 260 for 10 sec ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Radiant Intensity Rise Time 0-90% of output Fall Time 100-10% of output TEST CONDITIONS IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA ±10 UNITS nm Deg. V µA mW/sr µs µs 2001 Fairchild Semiconductor Corporation DS300278 3/12/01

PDF Datasheet Preview

1N6266

GaAs INFRARED EMITTING DIODE

PACKAGE DIMENSIONS

ANODE CASE
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the

TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• * Indicates JEDEC registered values
• The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package.

SCHEMATIC

ANODE

Connected

To Case

CATHODE

Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning
agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter

Rating

Unit

Operating Temperature *Storage Temperature *Soldering Temperature Iron 3,4,5 and 6 *Soldering Temperature Flow 3,4 and 6 *Continuous Forward Current *Forward Current pw, 1µs 200Hz *Reverse Voltage *Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR
-65 to +125

TSTG
-65 to +150

TSOL-I
240 for 5 sec

TSOL-F
260 for 10 sec

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER *Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage *Reverse Leakage Current *Radiant Intensity Rise Time 0-90% of output Fall Time 100-10% of output

TEST CONDITIONS IF = 100 mA

IF = 100 mA VR = 3 V

IF = 100 mA
±10

UNITS nm

Deg. V
µA mW/sr
µs µs
2001 Fairchild Semiconductor Corporation DS300278 3/12/01

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 1N6266 Datasheet file may be downloaded here without warranties.

Datasheet ID: 1N6266 512655