1N6265

1N6265 Datasheet

1N6265

Part	Datasheet
1N6265	1N6265 (pdf)

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1N6265 GaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS ANODE CASE 13 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • * Indicates JEDEC registered values SCHEMATIC • The 1N6265 is a 940 nm LED in a narrow angle, TO-46 package. ANODE Connected To Case CATHODE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension Total power output, PO, is the total power radiated by the device into a solid angle of 2 H steradians. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Continuous Forward Current Forward Current pw, 1µs 200Hz Reverse Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 Unit °C °C °C °C mA A V mW W ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current *Total Power Rise Time 0-90% of output Fall Time 100-10% of output TEST CONDITIONS IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA ±40 UNITS nm Deg. V µA mW µs µs 2001 Fairchild Semiconductor Corporation DS300277 3/6/01 1 OF 3 1N6265 GaAs INFRARED EMITTING DIODE NORMALIZED POWER OUTPUT PO - NORMALIZED POWER OUTPUT 100 50

PDF Datasheet Preview

1N6265

GaAs INFRARED EMITTING DIODE

PACKAGE DIMENSIONS

ANODE CASE
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the

TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• * Indicates JEDEC registered values

SCHEMATIC
• The 1N6265 is a 940 nm LED in a narrow angle, TO-46 package.

ANODE

Connected

To Case

CATHODE

Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning
agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension Total power output, PO, is the total power radiated by the device into
a solid angle of 2 H steradians.

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature *Storage Temperature *Soldering Temperature Iron 3,4,5 and 6 *Soldering Temperature Flow 3,4 and 6 *Continuous Forward Current *Forward Current pw, 1µs 200Hz *Reverse Voltage *Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR TSTG TSOL-I TSOL-F

IF VR PD

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
100 10 3 170

Unit °C °C °C °C mA A V mW W

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER *Peak Emission Wavelength Emission Angle at 1/2 Power *Forward Voltage *Reverse Leakage Current *Total Power Rise Time 0-90% of output Fall Time 100-10% of output

TEST CONDITIONS IF = 100 mA

IF = 100 mA VR = 3 V

IF = 100 mA
±40

UNITS nm

Deg. V
µA mW
µs µs
2001 Fairchild Semiconductor Corporation DS300277 3/6/01
1 OF 3
1N6265

GaAs INFRARED EMITTING DIODE

NORMALIZED POWER OUTPUT PO - NORMALIZED POWER OUTPUT
100 50

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Datasheet ID: 1N6265 512654