MIKROE-2768

MIKROE-2768 Datasheet

PID MIKROE-2768 Weight 30 g

Part	Datasheet
MIKROE-2768	MIKROE-2768 (pdf)

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FRAM 2 click PID MIKROE-2768 Weight 30 g Additional memory for your next project! FRAM 2 click carries the CY15B104Q 4-Mbit 512K x 8 serial F-RAM. A ferroelectric random-access memory or F-RAM is non-volatile and performs reads and writes similar to a SRAM. You can access the memory using an industry-standard serial peripheral interface SPI bus. On the functional level, the F-RAM operates in a similar way as serial flash and serial EEPROMs. The major difference between the CY15B104Q and a serial flash or EEPROM with the same pinout is the F-RAM's superior write performance, high endurance, and low power consumption. CY15B104Q FRAM features Low power consumption, high endurance and 4-Mbit of non-volatile memory - these are some of the many reasons you'll want to use this in your work. The CY15B104Q is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. Unlike serial flash and EEPROM, the CY15B104Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The CY15B104Q is capable of supporting read/write cycles, or 100 million times more write cycles than EEPROM. How the click works When accessing the CY15B104Q, the user addresses 512K locations, each containing eight data bits. These eight data bits are shifted in or out serially. The addresses are accessed using the SPI protocol. Cypress's CY15B104Q is an SPI slave device and operates at speeds up to 40 MHz. This highspeed serial bus provides high-performance serial communication to an SPI master. SPI pins of an IC are connected to SPI pins of mikroBUS so it can be driven by a microcontroller on one of our various development systems - clicker and clicker 2 development boards, Flip&Click boards, click shields, our famous EasyPIC v7 and more. The HLD HOLD_N pin can be used to interrupt a serial operation without aborting it. The WP WP_N pin ensures hardware write protect feature if the write protect enable bit in the Status Register is set to The SPI protocol includes a chip select to permit multiple devices on the bus , an opcode, and a three-byte address. There are nine opcodes, that can be issued by the bus master to the CY15B104Q. These opcodes specify the commands from the bus master to the slave device. After the CS CS_N is activated, the first byte transferred from the bus master is the opcode. Following the opcode, any addresses and data are then transferred. The CS CS_N must go inactive after an operation is complete and before a new opcode can be issued. click boards are plug and play! Up to now, MikroElektronika has released hundreds of click boards . We are releasing new ones every week. It is our intention to provide you with as many add-on boards as possible, so you will be able to expand your development board with additional functionality. Pull-up resistors are included on the FRAM 2 click and it's ready to be used immediately after plugging into the mikroBUS socket on one of our development boards. Ferroelectric RAM Ferroelectric RAM, better known as FRAM is a random-access memory. It's famous for fast access times and low power consumption. Also, since it's a non-volatile type of memory, data is retained upon power down. This type of memory is used in many industries today, but most commonly in small hand-held devices, since it has low power consumption, like mobile phones, electronic meters, medical applications, etc. Specifications Type Applications On-board modules Key Features FRAM Suitable for low-power applications CY15B104Q - a 4-Mbit non-volatile memory employing an advanced ferroelectric process 4-Mbit ferroelectric random access memory F-RAM logically organized as 512 K x 8, high-endurance 100 trillion Interface Input Voltage read/writes, 151-year data retention, low power consumption GPIO,SPI 3.3V Pinout diagram This table shows how the pinout on FRAM 2 click corresponds to the pinout on the mikroBUS socket the latter shown in the two middle columns . Notes Write protect Chip select SPI clock pin SPI slave data out pin SPI slave data in pin Power supply Ground WP 2 RST SCK 4 SCK SDO 5 MISO SDI 6 MOSI +3.3V 7 3.3V GND 8 GND PWM 16 HLD INT 15 NC TX 14 NC RX 13 NC SCL 12 NC SDA 11 NC 5V 10 NC GND 9 GND Notes Hold Ground Programming

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FRAM 2 click

PID MIKROE-2768 Weight 30 g

Additional memory for your next project!

FRAM 2 click carries the CY15B104Q 4-Mbit 512K x 8 serial F-RAM. A ferroelectric random-access memory or F-RAM is non-volatile and performs reads and writes similar to a SRAM. You can access the memory using an industry-standard serial peripheral interface SPI bus. On the functional level, the F-RAM operates in a similar way as serial flash and serial EEPROMs. The major difference between the CY15B104Q and a serial flash or EEPROM with the same pinout is the F-RAM's superior write performance, high endurance, and low power consumption.

CY15B104Q FRAM features

Low power consumption, high endurance and 4-Mbit of non-volatile memory - these are some of the many reasons you'll want to use this in your work. The CY15B104Q is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

Unlike serial flash and EEPROM, the CY15B104Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The CY15B104Q is capable of supporting read/write cycles, or 100 million times more write cycles than EEPROM.

How the click works

When accessing the CY15B104Q, the user addresses 512K locations, each containing eight data bits. These eight data bits are shifted in or out serially. The addresses are accessed using the SPI protocol. Cypress's CY15B104Q is an SPI slave device and operates at speeds up to 40 MHz. This highspeed serial bus provides high-performance serial communication to an SPI master. SPI pins of an IC are connected to SPI pins of mikroBUS so it can be driven by a microcontroller on one of our various development systems - clicker and clicker 2 development boards, Flip&Click boards, click shields, our famous EasyPIC v7 and more.

The HLD HOLD_N pin can be used to interrupt a serial operation without aborting it. The WP WP_N pin ensures hardware write protect feature if the write protect enable bit in the Status Register is set to The SPI protocol includes a chip select to permit multiple devices on the bus , an opcode, and a three-byte address. There are nine opcodes, that can be issued by the bus master to the CY15B104Q. These opcodes specify the commands from the bus master to the slave device. After the CS CS_N is activated, the first byte transferred from the bus master is the opcode. Following the opcode, any addresses and data are then transferred. The CS CS_N must go inactive after an operation is complete and before a new opcode can be issued.
click boards are plug and play!

Up to now, MikroElektronika has released hundreds of click boards . We are releasing new ones every week. It is our intention to provide you with as many add-on boards as possible, so you will be able to expand your development board with additional functionality.

Pull-up resistors are included on the FRAM 2 click and it's ready to be used immediately after plugging into the mikroBUS socket on one of our development boards.

Ferroelectric RAM

Ferroelectric RAM, better known as FRAM is a random-access memory. It's famous for fast access times and low power consumption. Also, since it's a non-volatile type of memory, data is retained upon power down.

This type of memory is used in many industries today, but most commonly in small hand-held devices, since it has low power consumption, like mobile phones, electronic meters, medical applications, etc.

Specifications

Type Applications On-board modules

Key Features

FRAM

Suitable for low-power applications

CY15B104Q - a 4-Mbit non-volatile memory employing an advanced ferroelectric process
4-Mbit ferroelectric random access memory F-RAM logically organized as 512 K x 8, high-endurance 100 trillion

Interface Input Voltage
read/writes, 151-year data retention, low power consumption GPIO,SPI 3.3V

Pinout diagram

This table shows how the pinout on FRAM 2 click corresponds to the pinout on the mikroBUS socket the latter shown in the two middle columns .

Notes

Write protect Chip select SPI clock pin

SPI slave data out pin SPI slave data in pin

Power supply Ground

WP 2 RST

SCK 4 SCK

SDO 5 MISO

SDI 6 MOSI
+3.3V 7 3.3V

GND 8 GND

PWM 16 HLD INT 15 NC TX 14 NC RX 13 NC SCL 12 NC SDA 11 NC 5V 10 NC GND 9 GND

Notes Hold

Ground

Programming

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MIKROE-2768 Datasheet file may be downloaded here without warranties.

Datasheet ID: MIKROE-2768 649427