VRF3933
VRF3933 Datasheet
The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
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VRF3933 |
VRF3933 (pdf) |
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| RF POWER VERTICAL MOSFET The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. VRF3933 100V, 300W, 150MHz • Improved Ruggedness V BR DSS = 250V • 300W with 22dB Typ. Gain 30MHz, 100V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 3:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • Improved Replacement for SD3933 • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Device dissipation TC = 25°C Storage Temperature Range Operating Junction Temperature Max All Ratings TC =25°C unless otherwise specified VRF3933 Unit ±40 -65 to 150 °C Static Electrical Characteristics Parameter V BR DSS VDS ON Drain-Source Breakdown Voltage VGS = 0V, ID = 100mA On State Drain Voltage ID ON = 10A, VGS = 10V IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V IGSS Gate-Source Leakage Current VDS = ±20V, VDS = 0V Forward Transconductance VDS = 10V, ID = 10A VGS TH Gate Threshold Voltage VDS = 10V, ID = 100mA Max Unit mhos Thermal Characteristics Characteristic Junction to Case Thermal Resistance Unit °C/W CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics Symbol CISS Coss Crss |
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