TE1B Datasheet
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TE1B (pdf) |
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TE1B Datasheet TE1B Datasheet TE1B is a bias board for Microsemi drivers and modules, providing easy control over three pairs of gate and drain voltages. 10V Supply V Id3 V Id2 V Id1 Figure TE1B Datasheet Application Notes: Test points for gate and drain voltages are labeled as Vg and Vd, followed by the number. Drain current can be measured over two test points denoted by Id’s. There is Ohm resistor in between these two test points. i.e. Id = Vd V id / October 2014 2014 Microsemi Corporation Non Confidential Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA +1 800 713-4113 Outside the USA +1 949 380-6100 Sales +1 949 380-6136 Fax +1 949 215-4996 E-mail: Microsemi Corporation Nasdaq MSCC offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs power management products timing and synchronization devices and precise time solutions, setting the world's standard for time voice processing devices RF solutions discrete components security technologies and scalable anti-tamper products Power-over-Ethernet ICs and midspans as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,400 employees globally. Learn more at 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. TE1B Datasheet |
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