MRF5812GR1
MRF5812GR1 Datasheet
MRF5812, R1, R2 MRF5812G, R1, R2
| Part | Datasheet |
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MRF5812GR1 |
MRF5812GR1 (pdf) |
| Related Parts | Information |
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MRF5812GR2 |
MRF5812GR2 |
| PDF Datasheet Preview |
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| MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish • Low Noise - dB 500 MHZ • Associated Gain = dB 500 MHz • Ftau - GHz 10v, 75mA • Cost Effective SO-8 package SO-8 R1 and Reel, 500 units R2 and Reel, 2500 units DESCRIPTION Designed for high current, low power, low noise, amplifiers up to GHz. ABSOLUTE MAXIMUM RATINGS Tcase = 25°C Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current Thermal Data Total Device Dissipation TC = 25ºC Derate above 25ºC Value 15 30 200 Unit Vdc mA Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. MRF5812, R1, R2 MRF5812G, R1, R2 ELECTRICAL SPECIFICATIONS Tcase = 25°C STATIC off Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage IC = mAdc, IB = 0 Collector-Base Breakdown Voltage IC = mAdc, IE = 0 Emitter-Base Breakdown Voltage IE = mAdc, IC = 0 Collector Cutoff Current VCB = 15 Vdc, VBE = 0 Vdc Emitter Cutoff Current VCE = Vdc, VBE = 0 Vdc DC Current Gain IC = 50 mAdc, VCE = Vdc DYNAMIC Symbol COB Ftau Test Conditions |
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