MRF553GT

MRF553GT Datasheet

MRF553 MRF553G

Part	Datasheet
MRF553GT	MRF553GT (pdf)

Related Parts	Information
MRF553G	MRF553G
MRF553	MRF553
MRF553T	MRF553T

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE 215 631-9840 FAX 215 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553 MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish • Specified V, 175 MHz Characteristics • Output Power = W • Minimum Gain = dB • Efficiency 60% Typ • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS Tcase = 25°C Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current Thermal Data Total Device Dissipation TC = 75ºC Derate above 75ºC Value 16 36 500 Unit Vdc mA Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. ELECTRICAL SPECIFICATIONS Tcase = 25°C STATIC off Test Conditions BVCEO BVCES BVCBO BVEBO ICES Collector-Emitter Breakdown Voltage IC=10 mAdc, IB=0 Collector-Emitter Sustaining Voltage IC = mAdc, IB = 0 Collector-Base Breakdown Voltage IE = 0, IC = 5 mAdc Emitter-Base Breakdown Voltage IE = 1 mAdc, IC = 0 Collector Cutoff Current VCE = 15 Vdc, VBE = 0 Vdc DC Current Gain IC = 250 mAdc, VCE = Vdc Both DYNAMIC Test Conditions Output Capacitance VCB = 10 Vdc, IE = 0, f = MHz MRF553 MRF553G Value Min. Typ.

PDF Datasheet Preview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE 215 631-9840 FAX 215 631-9855

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553 MRF553G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
• Specified V, 175 MHz Characteristics
• Output Power = W
• Minimum Gain = dB
• Efficiency 60% Typ
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability

Power Macro

DESCRIPTION Designed primarily for wideband large signal stages in the VHF frequency range.

ABSOLUTE MAXIMUM RATINGS Tcase = 25°C

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current

Thermal Data

Total Device Dissipation TC = 75ºC Derate above 75ºC

Value 16 36 500

Unit Vdc mA

Watts mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at or contact our factory direct.

ELECTRICAL SPECIFICATIONS Tcase = 25°C

STATIC off

Test Conditions

BVCEO BVCES BVCBO BVEBO

ICES

Collector-Emitter Breakdown Voltage IC=10 mAdc, IB=0

Collector-Emitter Sustaining Voltage IC = mAdc, IB = 0

Collector-Base Breakdown Voltage IE = 0, IC = 5 mAdc

Emitter-Base Breakdown Voltage IE = 1 mAdc, IC = 0

Collector Cutoff Current VCE = 15 Vdc, VBE = 0 Vdc

DC Current Gain IC = 250 mAdc, VCE = Vdc Both

DYNAMIC

Test Conditions

Output Capacitance VCB = 10 Vdc, IE = 0, f = MHz

MRF553 MRF553G

Value

Min.

Typ.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MRF553GT Datasheet file may be downloaded here without warranties.

Datasheet ID: MRF553GT 649069