MMA003AA

MMA003AA Datasheet

MMA003AA

Part	Datasheet
MMA003AA	MMA003AA (pdf)

PDF Datasheet Preview
MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • <2dB NF from 6-12GHz • Single supply voltage of +5V 50mA • Input and Output matched to 50Ω • 1.5mm x 2.82mm x 0.1mm die size Applications • Instrumentation • Electronic warfare • Microwave communications • Radar Gain & NF          Power & OIP3       Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 5V Parameter Frequency Small Signal Gain Noise Figure Output Power, P1dB Output Power, P3dB Output IP3 Drain Current Units GHz dB dBm mA 1 of 10 MMA003AA Table 1 Absolute Maximum Ratings, Not Simultaneous Parameter Drain Voltage VD Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside Rating +8 24 1501 -55 to +85 -65 to +150 1 MTTF > 108 hours at TC = 150°C Units V dBm °C °C °C °C/W Caution, ESD Sensitive Device Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 5V, IDD = 65mA Parameter Frequency IDD Small Signal Gain 20GHz Output Power, P1dB 20GHz Units mA dB dBm RF Probe Measurement Set-Up With Reference Planes2 TO VDD 100nF CAPACITOR TO GROUND

PDF Datasheet Preview

MMA003AA
2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier

Features
• >15dBm P1dB with 1.8dB NF and
13dB gain at 10GHz
• Gain flatness ~ +/-0.75dB
• <2dB NF from 6-12GHz
• Single supply voltage of +5V 50mA
• Input and Output matched to 50Ω
• 1.5mm x 2.82mm x 0.1mm die size

Applications
• Instrumentation
• Electronic warfare
• Microwave communications
• Radar

Gain & NF


    
 

Power & OIP3
     

Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 5V

Parameter

Frequency

Small Signal Gain

Noise Figure

Output Power, P1dB Output Power, P3dB Output IP3

Drain Current

Units GHz dB dBm mA
1 of 10

MMA003AA

Table 1 Absolute Maximum Ratings, Not Simultaneous

Parameter Drain Voltage VD Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside

Rating +8 24 1501
-55 to +85 -65 to +150
1 MTTF > 108 hours at TC = 150°C

Units V
dBm °C °C °C °C/W

Caution, ESD Sensitive Device

Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 5V, IDD = 65mA

Parameter

Frequency

IDD Small Signal Gain
20GHz

Output Power, P1dB
20GHz

Units mA dB dBm

RF Probe Measurement Set-Up With Reference Planes2

TO VDD
100nF CAPACITOR TO GROUND

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Datasheet ID: MMA003AA 649060