APTM50TDUM65PG

APTM50TDUM65PG Datasheet

APTM50TDUM65PG

Part	Datasheet
APTM50TDUM65PG	APTM50TDUM65PG (pdf)

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APTM50TDUM65PG Triple dual common source MOSFET Power Module VDSS = 500V RDSon = typ Tj = 25°C ID = 51A Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies S 1/ S2 S3/ S4 S5/ S6 S2 G2 S4 G4 S6 G6 Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration S1/S 2 S2 G2 S3/S 4 S4 G4 S5/S6 S6 G6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low 12mm profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM50TDUM65PG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic

PDF Datasheet Preview

APTM50TDUM65PG

Triple dual common source

MOSFET Power Module

VDSS = 500V RDSon = typ Tj = 25°C ID = 51A Tc = 25°C

Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

S 1/ S2

S3/ S4

S5/ S6

S2 G2

S4 G4

S6 G6

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• High level of integration

S1/S 2

S2 G2

S3/S 4

S4 G4

S5/S6

S6 G6

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Very low 12mm profile
• Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM50TDUM65PG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

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Datasheet ID: APTM50TDUM65PG 648911