APTM50DHM35G
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APTM50DHM35G (pdf) |
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APTM50DHM35G Asymmetrical - bridge MOSFET Power Module VDSS = 500V RDSon = typ Tj = 25°C ID = 99A Tc = 25°C VBUS Application Q1 G1 • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives OUT2 OUT1 0/VB US • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration VB US OUT1 0/VBUS OUT2 • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive |
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