APTM50DAM38CTG
APTM50DAM38CTG Datasheet
APTM50DAM38CTG
| Part | Datasheet |
|---|---|
APTM50DAM38CTG |
APTM50DAM38CTG (pdf) |
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| APTM50DAM38CTG Boost chopper SiC FWD diode MOSFET Power Module V BUS S ENSE VB US NT C2 OUT Q2 VDSS = 500V RDSon = typ Tj = 25°C ID = 90A Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated S2 0/VBU S NT C1 VB US VB US SE NSE G2 S2 0/VBUS S2 G2 NTC2 NTC1 • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Absolute maximum ratings Parameter • RoHS Compliant Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM50DAM38CTG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics |
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