APTM20SKM10TG

APTM20SKM10TG Datasheet

APTM20SKM10TG

Part	Datasheet
APTM20SKM10TG	APTM20SKM10TG (pdf)

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APTM20SKM10TG Buck chopper MOSFET Power Module VDSS = 200V RDSon = typ Tj = 25°C ID = 175A Tc = 25°C VB US NTC2 0/VBU S SENSE 0/VBU S NT C1 VB US S1 G1 0/VBUS SENSE 0/VBUS 0/VBUS SENSE NTC2 NTC1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM20SKM10TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

PDF Datasheet Preview

APTM20SKM10TG

Buck chopper MOSFET Power Module

VDSS = 200V RDSon = typ Tj = 25°C ID = 175A Tc = 25°C

VB US

NTC2
0/VBU S SENSE 0/VBU S

NT C1

VB US

S1 G1
0/VBUS SENSE
0/VBUS
0/VBUS SENSE

NTC2 NTC1

Application
• AC and DC motor control
• Switched Mode Power Supplies

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM20SKM10TG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

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Datasheet ID: APTM20SKM10TG 648891