APTM120U10DAG

APTM120U10DAG Datasheet

APTM120U10DAG

Part	Datasheet
APTM120U10DAG	APTM120U10DAG (pdf)

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APTM120U10DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ Tj = 25°C ID = 116A Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1200 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C 3290 IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3200 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTM120U10DAG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on Drain Source on Resistance VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V VGS = 10V, ID = 58A Tj = 25°C Tj = 125°C 1 mA 3 100 120 mΩ VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V ±400 nA

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APTM120U10DAG

Single switch with Series diodes MOSFET Power Module

VDSS = 1200V RDSon = 100mΩ typ Tj = 25°C ID = 116A Tc = 25°C

Application
• Zero Current Switching resonant mode

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current
1200

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C
3290

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
3200

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTM120U10DAG

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current RDS on Drain Source on Resistance

VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V

VGS = 10V, ID = 58A

Tj = 25°C Tj = 125°C
1 mA 3 100 120 mΩ

VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V
±400 nA

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Datasheet ID: APTM120U10DAG 648882