APTM120H57FT3G
APTM120H57FT3G Datasheet
APTM120H57FT3G
| Part | Datasheet |
|---|---|
APTM120H57FT3G |
APTM120H57FT3G (pdf) |
| PDF Datasheet Preview |
|---|
| APTM120H57FT3G Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = typ Tj = 25°C ID = 17A Tc = 25°C 13 14 Q1 18 Q3 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 22 7 19 23 8 Q2 10 Q4 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 14 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance 1200 Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM120H57FT3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit |
| More datasheets: SMD2440-001 | SMD2440-021 | SMD2440-011 | SME2470-011 | SMD2420-001 | LTST-T670YKT | TLE4998S8DXUMA1 | TLE4998S8XUMA1 | 76650-0137 | MDM-37SH041B |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APTM120H57FT3G Datasheet file may be downloaded here without warranties.