APTM120DA68T1G

APTM120DA68T1G Datasheet

APTM120DA68T1G

Part	Datasheet
APTM120DA68T1G	APTM120DA68T1G (pdf)

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APTM120DA68T1G Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 680mΩ typ Tj = 25°C ID = 15A Tc = 25°C 3 NTC Pins 1/2 3/4 5/6 must be shorted together Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Power MOS 8 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1200 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTM120DA68T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current VDS =1200V VGS = 0V Tj = 25°C Tj = 125°C 100 µA 500 RDS on Drain Source on Resistance VGS = 10V, ID = 12A 680 816 mΩ VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 2.5mA VGS = ±30 V 34 5V ±100 nA

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APTM120DA68T1G

Boost chopper MOSFET Power Module

VDSS = 1200V RDSon = 680mΩ typ Tj = 25°C ID = 15A Tc = 25°C
3 NTC

Pins 1/2 3/4 5/6 must be shorted together

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Power MOS 8 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current
1200

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTM120DA68T1G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

VDS =1200V VGS = 0V

Tj = 25°C Tj = 125°C
100 µA 500

RDS on Drain Source on Resistance

VGS = 10V, ID = 12A
680 816 mΩ

VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

VGS = VDS, ID = 2.5mA VGS = ±30 V
34 5V ±100 nA

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Datasheet ID: APTM120DA68T1G 648871