APTGV15H120T3G
APTGV15H120T3G Datasheet
APTGV15H120T3G
| Part | Datasheet |
|---|---|
APTGV15H120T3G |
APTGV15H120T3G (pdf) |
| PDF Datasheet Preview |
|---|
| APTGV15H120T3G Full - Bridge NPT & Trench + Field IGBT Power module Trench & Field IGBT Q1, Q3 VCES = 1200V IC = 15A Tc = 80°C Fast NPT IGBT Q2, Q4 VCES = 1200V IC = 15A Tc = 80°C 13 14 CR1 CR3 CR2 CR4 16 R1 Top switches Trench + Field Stop Bottom switches FAST NPT 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 14 13 10 11 12 All multiple inputs and outputs must be shorted together 13/14 15/16 26/27 31/32 Application • Solar converter • Q2, Q4 FAST Non Punch Through NPT IGBT - Switching frequency up to 50 kHz - RBSOA & SCSOA rated - Low tail current • Q1, Q3 Trench & Field Stop - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring • Optimized conduction & switching losses • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTGV15H120T3G All ratings Tj = 25°C unless otherwise specified Top switches Top Trench + Field Stop characteristics Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM Pulsed Collector Current VGE Gate Emitter Voltage PD Maximum Power Dissipation 1200 TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APTGV15H120T3G Datasheet file may be downloaded here without warranties.