APTGT580U60D4G

APTGT580U60D4G Datasheet

APTGT580U60D4G

Part	Datasheet
APTGT580U60D4G	APTGT580U60D4G (pdf)

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Single switch Trench + Field Stop IGBT Power Module APTGT580U60D4G VCES = 600V IC = 600A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • M6 connectors for power • M4 connectors for signal • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C 1600 Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGT580U60D4G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V, VCE = 600V VGE = 15V IC = 600A Tj = 25°C Tj = 125°C VGE = VCE , IC = 10mA VGE = 20V, VCE = 0V 2400 nA Dynamic Characteristics QG Gate charge Td on Tr

PDF Datasheet Preview

Single switch Trench + Field Stop IGBT

Power Module

APTGT580U60D4G

VCES = 600V IC = 600A Tc = 80°C

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration

Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C
1600

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGT580U60D4G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic ICES Zero Gate Voltage Collector Current

VCE sat Collector Emitter saturation Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

Test Conditions

Min Typ Max Unit

VGE = 0V, VCE = 600V

VGE = 15V IC = 600A

Tj = 25°C Tj = 125°C

VGE = VCE , IC = 10mA

VGE = 20V, VCE = 0V
2400 nA

Dynamic Characteristics

QG Gate charge

Td on Tr

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Datasheet ID: APTGT580U60D4G 648841