APTGT400DA120D3G

APTGT400DA120D3G Datasheet

APTGT400DA120D3G

Part	Datasheet
APTGT400DA120D3G	APTGT400DA120D3G (pdf)

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Boost chopper Trench + Field Stop IGBT Power Module APTGT400DA120D3G VCES = 1200V IC = 400A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Max ratings Unit 1200 TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C 2100 Tj = 125°C 800A 1100V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGT400DA120D3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = 0V, VCE = 1200V 750 µA VGE = 15V IC = 400A Tj = 25°C Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V V 400 nA Dynamic Characteristics QG Gate charge Td on Tr

PDF Datasheet Preview

Boost chopper Trench + Field Stop IGBT

Power Module

APTGT400DA120D3G

VCES = 1200V IC = 400A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors

Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

ICM VGE PD RBSOA

Max ratings

Unit
1200

TC = 25°C

TC = 80°C

TC = 25°C
±20

TC = 25°C
2100

Tj = 125°C 800A 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGT400DA120D3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VCE sat Collector Emitter saturation Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

VGE = 0V, VCE = 1200V
750 µA

VGE = 15V IC = 400A

Tj = 25°C Tj = 125°C

VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V

V 400 nA

Dynamic Characteristics

QG Gate charge

Td on Tr

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Datasheet ID: APTGT400DA120D3G 648836