APTGF50H60T1G
APTGF50H60T1G Datasheet
APTGF50H60T1G
| Part | Datasheet |
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APTGF50H60T1G |
APTGF50H60T1G (pdf) |
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| APTGF50H60T1G Full - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* Tc = 80°C CR1 CR3 CR2 CR4 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Max ratings Unit TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C Tj = 125°C 100A 500V * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF50H60T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat VGE th IGES Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C VGE =15V IC = 50A |
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